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Ordering number : ENN7412
SBFP540D
NPN Epitaxial Planar Silicon Transistor
SBFP540D
UHF to C Band Low Noise Amplifier, Oscillation Applications
Features
• • • • • •
Package Dimensions
3 0.05
4 0.6 1.0
2
1 0.3
(Bottom View)
0.3
Low noise : NF=0.9dB typ (f=1.8GHz). unit : mm High cutoff frequency : fT=20GHz typ(VCE=1V). 2215 High cutoff frequency : fT=29GHz typ(VCE=4V). Low voltage operation. High gain :S21e2=17.5dB typ (VCE=1V, f=1.8GHz). 0.2 High gain :S21e2=18.5dB typ (VCE=2V, f=1.8GHz). 0.05
[SBFP540D]
0.5 0.05 0.2
0.05
1 : Base 2 : Emitter 3 : Collector 4 : Emitter SANYO : ECSP1008-4
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions
0.8
0.6
Ratings 14 4.5 1 80 100 150 --55 to +150
Unit V V V mA mW °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT1 fT2 Cre
2 S21e 1 2 S21e 2
Conditions VCB=5V, IE=0 VEB=1V, IC=0 VCE=3.5V, IC=20mA VCE=1V, IC=10mA VCE=4V, IC=50mA VCB=1V, f=1MHz VCE=1V, IC=10mA, f=1.8GHz VCE=2V, IC=20mA, f=1.8GHz VCE=2V, IC=5mA, f=1.8GHz
Ratings min typ max 200 70 50 20 22 29 0.15 17.5 16 18.5 0.9 1.3 0.25 200
Unit nA µA GHz GHz pF dB dB dB
NF
Marking : AF
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22503 TS IM TA-100132 No.7412-1/14
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SBFP540D
Electrical Connection (Top view)
Polarity mark (Top) Base Emitter Emitter Collector *Electrodes : Bottom
Polarity mark Emitter Collector
Base Emitter
12
IC -- VCE
100µA 90µA
Collector Current, IC -- mA
100 90
IC -- VBE
VCE=3V
0 0.2 0.4 0.6 0.8
Collector Current, IC -- mA
8
80µA 70µA 60µA 50µA 40µA 30µA
20µA
IB=10µA
0 1 2 3 4 IT05703
80 70 60 50 40 30 20 10 0
6
4
2
0
1.0
1V
10
1.2 IT05704
Collector-to-Emitter Voltage, VCE -- V
1000 7 5 3 2
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
1.0
Cob -- VCB
f=1MHz
Output Capacitance, Cob -- pF
7
DC Current Gain, hFE
VCE=3.5V
1.0V
100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7 1.0 2
5
3
2
3
5 7 10
2
3
Collector Current, IC -- mA
7
5 7 100 IT05705
0.1 0.1
2
3
5
7
1.0
2
3
5
7
10
Cre -- VCB
Collector-to-Base Voltage, VCB -- V
100
IT05715
f T -- IC
f=1MHz
Reverse Transfer Capacitance, Cre -- pF Gain-Bandwidth Product, f T -- GHz
5
7 5 3 2
V V CE=3 1V
3
10 7 5 3 2
2
0.1 0.1
2
3
5
7
1.0
2
3
5
Collector-to-Base Voltage, VCB -- V
10 IT05716
7
1.0 1.0
2
3
5
7
10
2
3
5
Collector Current, IC -- mA
7 100 IT05714
No.7412-2/14
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SBFP540D
25
2 Forward Transfer Gain, S21e -- dB
S21e -- IC
2
4.0 3.5
NF -- IC
20
1V
15
Noise Figure, NF -- dB
3V V CE=
3.0 2.5 2.0 1.5 1.0 0.5
10
0Ω t =5 p Zs Zso = s Z
5
0 1.0
0 2 3 5 7 10 2 3 5
VCE=1V f=1.8GHz
0 10 20 30 40 50 60 70 80
Collector Current, IC -- mA
4.0 3.5
7 100 IT05717 15 10
NF -- IC
Collector Current, IC -- mA
IT05710
Pin -- Pout
f=1.8GHz VCE=2.0V IC=7mA
Output Level, Pout -- dBm
Noise Figure, NF -- dB
3.0 2.5 2.0 1.5 1.0 0.5 0 0 10 20 30 40 50 60
5 0 --5 --10 --15 --20 --25 --30 --45
Zs= sopt Z Zs=
50Ω
= Zs
Zs
op
t
Zs
=5
0Ω
VCE=3V f=1.8GHz
70 80
--40
--35
--30
--25
--20
--15
--10
--5
0
Collector Current, IC -- mA
15 10
IT05711 120
Input Level, Pin -- dBm
IT05712
Pin -- Pout
PC -- Ta
Collector Dissipation, PC -- mW
--15 --10 --5 0
Output Level, Pout -- dBm
f=1.8GHz VCE=2.0V IC=18mA
100
5 0 --5 --10 --15 --20 --25 --30 --45
Z
Z s=
so
pt
80
Zs
=5
0Ω
60
40
20
0 --40 --35 --30 --25 --20 0 20 40 60 80 100 120 140 160
Input Level, Pin -- dBm
IT05861
Ambient Temperature, Ta -- °C
IT05713
No.7412-3/14
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SBFP540D
S Parameters (Common emitter)
VCE=1V, IC=1mA, ZO=50Ω Freq(MHz) S11 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600.