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SBFP540D Dataheets PDF



Part Number SBFP540D
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description SBFP540D
Datasheet SBFP540D DatasheetSBFP540D Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENN7412 SBFP540D NPN Epitaxial Planar Silicon Transistor SBFP540D UHF to C Band Low Noise Amplifier, Oscillation Applications Features • • • • • • Package Dimensions 3 0.05 4 0.6 1.0 2 1 0.3 (Bottom View) 0.3 Low noise : NF=0.9dB typ (f=1.8GHz). unit : mm High cutoff frequency : fT=20GHz typ(VCE=1V). 2215 High cutoff frequency : fT=29GHz typ(VCE=4V). Low voltage operation. High gain :S21e2=17.5dB typ (VCE=1V, f=1.8GHz). 0.2 High gain :S21e2=18..

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www.DataSheet4U.com Ordering number : ENN7412 SBFP540D NPN Epitaxial Planar Silicon Transistor SBFP540D UHF to C Band Low Noise Amplifier, Oscillation Applications Features • • • • • • Package Dimensions 3 0.05 4 0.6 1.0 2 1 0.3 (Bottom View) 0.3 Low noise : NF=0.9dB typ (f=1.8GHz). unit : mm High cutoff frequency : fT=20GHz typ(VCE=1V). 2215 High cutoff frequency : fT=29GHz typ(VCE=4V). Low voltage operation. High gain :S21e2=17.5dB typ (VCE=1V, f=1.8GHz). 0.2 High gain :S21e2=18.5dB typ (VCE=2V, f=1.8GHz). 0.05 [SBFP540D] 0.5 0.05 0.2 0.05 1 : Base 2 : Emitter 3 : Collector 4 : Emitter SANYO : ECSP1008-4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 0.8 0.6 Ratings 14 4.5 1 80 100 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT1 fT2 Cre 2 S21e 1 2 S21e 2 Conditions VCB=5V, IE=0 VEB=1V, IC=0 VCE=3.5V, IC=20mA VCE=1V, IC=10mA VCE=4V, IC=50mA VCB=1V, f=1MHz VCE=1V, IC=10mA, f=1.8GHz VCE=2V, IC=20mA, f=1.8GHz VCE=2V, IC=5mA, f=1.8GHz Ratings min typ max 200 70 50 20 22 29 0.15 17.5 16 18.5 0.9 1.3 0.25 200 Unit nA µA GHz GHz pF dB dB dB NF Marking : AF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22503 TS IM TA-100132 No.7412-1/14 DataSheet 4 U .com www.DataSheet4U.com SBFP540D Electrical Connection (Top view) Polarity mark (Top) Base Emitter Emitter Collector *Electrodes : Bottom Polarity mark Emitter Collector Base Emitter 12 IC -- VCE 100µA 90µA Collector Current, IC -- mA 100 90 IC -- VBE VCE=3V 0 0.2 0.4 0.6 0.8 Collector Current, IC -- mA 8 80µA 70µA 60µA 50µA 40µA 30µA 20µA IB=10µA 0 1 2 3 4 IT05703 80 70 60 50 40 30 20 10 0 6 4 2 0 1.0 1V 10 1.2 IT05704 Collector-to-Emitter Voltage, VCE -- V 1000 7 5 3 2 hFE -- IC Base-to-Emitter Voltage, VBE -- V 1.0 Cob -- VCB f=1MHz Output Capacitance, Cob -- pF 7 DC Current Gain, hFE VCE=3.5V 1.0V 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7 1.0 2 5 3 2 3 5 7 10 2 3 Collector Current, IC -- mA 7 5 7 100 IT05705 0.1 0.1 2 3 5 7 1.0 2 3 5 7 10 Cre -- VCB Collector-to-Base Voltage, VCB -- V 100 IT05715 f T -- IC f=1MHz Reverse Transfer Capacitance, Cre -- pF Gain-Bandwidth Product, f T -- GHz 5 7 5 3 2 V V CE=3 1V 3 10 7 5 3 2 2 0.1 0.1 2 3 5 7 1.0 2 3 5 Collector-to-Base Voltage, VCB -- V 10 IT05716 7 1.0 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 100 IT05714 No.7412-2/14 DataSheet 4 U .com www.DataSheet4U.com SBFP540D 25 2 Forward Transfer Gain, S21e -- dB S21e -- IC 2 4.0 3.5 NF -- IC 20 1V 15 Noise Figure, NF -- dB 3V V CE= 3.0 2.5 2.0 1.5 1.0 0.5 10 0Ω t =5 p Zs Zso = s Z 5 0 1.0 0 2 3 5 7 10 2 3 5 VCE=1V f=1.8GHz 0 10 20 30 40 50 60 70 80 Collector Current, IC -- mA 4.0 3.5 7 100 IT05717 15 10 NF -- IC Collector Current, IC -- mA IT05710 Pin -- Pout f=1.8GHz VCE=2.0V IC=7mA Output Level, Pout -- dBm Noise Figure, NF -- dB 3.0 2.5 2.0 1.5 1.0 0.5 0 0 10 20 30 40 50 60 5 0 --5 --10 --15 --20 --25 --30 --45 Zs= sopt Z Zs= 50Ω = Zs Zs op t Zs =5 0Ω VCE=3V f=1.8GHz 70 80 --40 --35 --30 --25 --20 --15 --10 --5 0 Collector Current, IC -- mA 15 10 IT05711 120 Input Level, Pin -- dBm IT05712 Pin -- Pout PC -- Ta Collector Dissipation, PC -- mW --15 --10 --5 0 Output Level, Pout -- dBm f=1.8GHz VCE=2.0V IC=18mA 100 5 0 --5 --10 --15 --20 --25 --30 --45 Z Z s= so pt 80 Zs =5 0Ω 60 40 20 0 --40 --35 --30 --25 --20 0 20 40 60 80 100 120 140 160 Input Level, Pin -- dBm IT05861 Ambient Temperature, Ta -- °C IT05713 No.7412-3/14 DataSheet 4 U .com www.DataSheet4U.com SBFP540D S Parameters (Common emitter) VCE=1V, IC=1mA, ZO=50Ω Freq(MHz) S11 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600.


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