SBFP540B

www.DataSheet4U.com Ordering number : ENN7436 SBFP540B NPN Epitaxial Planar Silicon Transistor SBFP540B UHF to C Band Low Noise Amplifier, Oscillation Applications Features Package Dimensions Low noise : NF=0.9dB typ (f=1.8GHz). unit : mm High cut-off frequency : fT=20GHz typ (VCE=1V). 2214 : fT=29GHz typ (VCE=4V). Low voltage operation. Bottom View High Gain : S21e2=18.5dB typ (f=1.8GHz). 0.35 Ultrasmall (1006 size), thin (0.5mm) leadless package. 0.2 0.05 0.25 [SBFP540B] Side View 3 0.05 4 0.65 0.4 0.25 0.05 2 1 0.05 0.5 Top View 0.6 0.15 0.15 Side View 4 Marking 1 3 1.0 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 1 : Base 2 : Emitter 3 : Collector 4 : Emitter SANYO : ECSP1006-4 Ratings 14 4.5 1 80 100 150 --55 to +150 Unit V V V mA mW °C °C 2 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitance Symbol ICBO IEBO hFE fT1 fT2 Cre Conditions VCB=5V, IE=0 VEB=1V, IC=0 VCE=3.5V, IC=20mA VCE=1V, IC=10mA VCE=4V, IC=50mA VCB=1V, f=1MHz Ratings min typ max 200 70 50 20 22 29 0.15 0.25 200 GHz GHz pF Unit nA µA Marking : AF Continued on next page. Any and all SANYO products described or contained herein do not have s...