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STPS61150CW Dataheets PDF



Part Number STPS61150CW
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description power Schottky rectifier
Datasheet STPS61150CW DatasheetSTPS61150CW Datasheet (PDF)

STPS61150C Datasheet 150 V power Schottky rectifier A1 K A2 TO-247 A2 K A1 Product status STPS61150C Product summary IF(AV) 2 x 30 A VRRM 150 V Tj(max.) 175 °C VF(typ.) 0.63 V Features • High junction temperature capability • Low leakage current • Good trade off between leakage current and forward voltage drop • Low thermal resistance • High frequency operation • ECOPACK®2 compliant Applications • Switching diode • SMPS • DC/DC converter • Telecom power Description This dual diode.

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STPS61150C Datasheet 150 V power Schottky rectifier A1 K A2 TO-247 A2 K A1 Product status STPS61150C Product summary IF(AV) 2 x 30 A VRRM 150 V Tj(max.) 175 °C VF(typ.) 0.63 V Features • High junction temperature capability • Low leakage current • Good trade off between leakage current and forward voltage drop • Low thermal resistance • High frequency operation • ECOPACK®2 compliant Applications • Switching diode • SMPS • DC/DC converter • Telecom power Description This dual diode common cathode Schottky rectifier is optimized for high frequency switched mode power supplies. Packaged in TO-247, the STPS61150C combines high current rating and low volume to enhance both reliability and power density of the application. DS3631 - Rev 2 - June 2018 For further information contact your local STMicroelectronics sales office. www.st.com STPS61150C Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values, per diode at 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) Average forward current, δ = 0.5, square wave Tc = 150 °C Tc = 145 °C Per diode Per device IFSM Surge non repetitive forward current tp = 10 ms sinusoidal PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C Tstg Storage temperature range Tj Maximum operating junction temperature(1) 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Value Unit 150 V 80 A 30 A 60 500 A 2290 W -65 to +175 °C +175 °C Symbol Rth(j-c) Rth(c) Table 2. Thermal resistance parameters Junction to case Coupling Parameter Per diode Total Value 0.9 0.6 0.3 Unit °C/W °C/W When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) For more information, please refer to the following application note : • AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (per diode) Symbol Parameter IR (1) Reverse leakage current VF (2) Forward voltage drop 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp =380 µs, δ < 2% Test conditions Tj = 25 °C Tj = 125 °C VR = VRRM Tj = 25 °C Tj = 125 °C IF = 30 A Tj = 25 °C Tj = 125 °C IF = 60 A Min. Typ. Max. Unit - 7 20 µA - 7 25 mA - 0.84 - 0.63 0.67 V - 0.92 - 0.76 0.80 To evaluate the conduction losses, use the following equation: P = 0.54 x IF(AV) + 0.0043 x IF 2 (RMS) For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode DS3631 - Rev 2 page 2/10 STPS61150C Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current (per diode) PF(AV)(W) 30 25 20 δ=0.05 δ=0.1 δ=0.2 δ=0.5 15 δ=1.0 10 T 5 IF(AV)(A) δ=tp/T tp 0 0 5 10 15 20 25 30 35 40 Figure 2. Average forward current versus ambient temperature (δ = 0.5, per diode) IF(AV)(A) 35 30 25 20 15 10 5 0 0 T δ=tp/T 25 tp 50 Rth(j-a)=Rth(j-c) Rth(j-a)=15°C/W T a mb (°C) 75 100 125 150 175 Figure 3. Normalized avalanche power derating versus pulse duration (Tj= 125 °C) PARM (t p ) 1 PARM(10 µs) 0.1 0.01 0.001 1 t p(µs) 10 100 1000 Figure 4. Relative variation of thermal impedance junction to case versus pulse duration Z th(j-c) / R th(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Single pulse 0.0 1.E-03 1.E-02 tp(s) 1.E-01 1.E+00 DS3631 - Rev 2 page 3/10 STPS61150C Characteristics (curves) Figure 5. Reverse leakage current versus reverse voltage applied (typical values, per diode) IR (µA) 1.E+05 1.E+04 1.E+03 1.E+02 1.E+01 Tj = 150 °C Tj = 125 °C Tj = 100 °C Tj = 75 °C Tj = 50 °C 1.E+00 Tj = 25 °C 1.E-01 10 30 50 VR(V) 70 90 110 130 150 Figure 6. Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 10000 F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C 1000 100 1 VR(V) 10 100 1000 Figure 7. Forward voltage drop versus forward current (per diode) IF (A) 100.0 Tj = 125 °C (maximum values) 10.0 Tj = 125 °C (typical values) Tj = 25 °C (maximum values) 1.0 VF(V) 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 DS3631 - Rev 2 page 4/10 STPS61150C Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS3631 - Rev 2 page 5/10 STPS61150C TO-247 package information 2.1 TO-247 package information • Epoxy meets UL94, V0 • Cooling method: by conduction .


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