2N5151

www.DataSheet4U.com TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 Devices 2N5151 2N5151L 2N5153 2N5153L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC(3, 4) PT Tj, Tstg Symbol RθJC All Units 80 100 5.5 2.0 1.0 11.8 -65 to +200 Max. 15 Units Vdc Vdc Vdc Adc W W °C Unit C/W TO- 5* 2N5151L, 2N5153L @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.7 mW/0C for TA > +250C 2) Derate linearly 66.7 mW/0C for TC > +250C 3) Derate linearly 6.67 mW/0C for TA > +250C 4) Derate linearly 80 mW/0C for TC > +250C 0 2N5151, 2N5153 TO-39* (TO-205AD) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO IEBO Min. 80 1.0 1.0 1.0 1.0 50 Max. Unit Vdc µAdc mAdc µAdc mAdc µAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc, IB = 0 Emitter-Base Cutoff Current VEB = 4.0 Vdc, Ic = 0 VEB = 5.5 Vdc, Ic = 0 Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 0 VCE = 100 Vdc, VBE = 0 Collector-Base Cutoff Current VCE = 40 Vdc, IB = 0 ICES ICEO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 DataSheet 4 U .com www.DataSheet4U.com 2N5151, 2N515...