MTV10N100E

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV10N100E/D Designer's TMOS E-FET .™ Power Field Effect Transistor D 3 PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to– source diode with a fast recovery time. Designed for high voltage, high speed switching applications in surface mount PWM motor controls and both ac–dc and dc–dc power supplies. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ™ Data Sheet MTV10N100E TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM ® D N–Channel G CASE 433–01, Style 2 D3PAK Surface Mount Robust High Voltage Termination S Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterize...