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SSM4410M
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Low on-resistance Fast switching Simple drive requirement
D D D
D
BV ID
DSS
30V 13.5mΩ 10A
R DS(ON)
G S
SO-8
S S
Description
D
Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial and industrial surface mount applications and well suited for low voltage applications such as DC/DC converters.
G S
Absolute Maximum Ratings
Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1,2 3 3
Rating 30 ± 20 10 8 50 2.5 0.02 -55 to 150 -55 to 150
Units V V A A A W W/°C °C °C
Continuous Drain Current Total Power Dissipation Linear Derating Factor
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Max. Value 50 Unit °C/W
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SSM4410M
Electrical Characteristics @ T j=25oC (unless otherwise specified)
Symbol BVDSS
∆ BV DSS/∆ Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 30 1 -
Typ. 0.037
Max. Units 13.5 22 3 1 25 ±100 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=10A VGS=4.5V, ID=5A
20 16.6 2.7 10.6 9.6 12.4 25.4 33 745 510 210
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55oC)
o
VDS=VGS, ID=250uA VDS=15V, ID=10A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= ± 20V ID=10A VDS=15V VGS=5V VDS=25V ID=1A RG=3.3Ω , VGS=5V RD=25Ω VGS=0V VDS=15V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol IS ISM VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.3V
1
Min. -
Typ. -
Max. Units 2.3 50 1.3 A A V
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Tj=25°C, IS=2.3A, VGS=0V
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on FR4 board, t<10 sec.
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SSM4410M
200
150
T C =25 C
o
V G =10V V G =8.0V
T C =150 o C
V G =10V V G =8.0V
150
ID , Drain Current (A)
ID , Drain Current (A)
100
V G =6.0V
100
V G =6.0V
50
V G =4.0V
50
V G =4.0V
0 0 1 2 3 4 5 6 7 8
0 0 2 4 6 8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
1.8
I D =10A
18
T C =25 o C
1.6
I D =10A V G =10V
RDSON (mΩ )
16
Normalized R DS(ON)
1.4
1.2
14
1
12
0.8
10 3 4 5 6 7 8 9 10 11
0.6 -50 0 50 100 150
V GS (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance vs. Junction Temperature
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SSM4410M
12
3
10
2.5
ID , Drain Current (A)
8
2
PD (W)
6
1.5
4
1
2
0.5
0 25 50 75 100 125 150
0 0 30 60 90 120 150
T c , Case Temperature ( o C )
T c , Case Temperature ( C)
o
Fig 5. Maximum Drain Current v.s. Case Temperature
Fig 6. Typical Power Dissipation
100
1
DUTY=0.5
Normalized Thermal Response (R thja)
0.2
10
1ms
0.1
0.1
0.05
ID (A)
10ms
0.02 0.01
PDM
1
100ms
0.01
SINGLE PULSE
t T
Duty factor = t/T Peak Tj = P DM x Rthja + Ta
T c =25 o C Single Pluse
0.1 0.1 1 10
1s
100
0.001 0.0001
0.001
0.01
0.1
1
10
100
1000
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
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SSM4410M
12
10000
f=1.0MHz
I D =10A
10
V DS =15V
VGS , Gate to Source Voltage (V)
8
1000
Ciss C (pF)
6
Coss Crss
4
100
2
0 0 5 10 15 20 25
10 1 7 13 19
Q G , Total Gate Charge (nC)
V DS (V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100.00
3
10.00
2
1.00
VGS(th) (V)
1 0
T j =150 C IS(A)
o
T j =25 C
o
0.10
0.01 0 0.4 0.8 1.2
-50
0
50
100
150
V SD (V)
T j , Jujnction Temperature ( C )
o
Fig 11. Forward Characteristic of Reverse Diode
Fig 12. Gate Threshold Voltage vs. Junction Temperature
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SSM4410M
VDS
RD
90%
D
VDS
TO THE O.