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SSM4410M Dataheets PDF



Part Number SSM4410M
Manufacturers Silicon
Logo Silicon
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet SSM4410M DatasheetSSM4410M Datasheet (PDF)

www.DataSheet4U.com SSM4410M N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low on-resistance Fast switching Simple drive requirement D D D D BV ID DSS 30V 13.5mΩ 10A R DS(ON) G S SO-8 S S Description D Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial and industrial surface mount applications and well suited for low volta.

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www.DataSheet4U.com SSM4410M N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low on-resistance Fast switching Simple drive requirement D D D D BV ID DSS 30V 13.5mΩ 10A R DS(ON) G S SO-8 S S Description D Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial and industrial surface mount applications and well suited for low voltage applications such as DC/DC converters. G S Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating 30 ± 20 10 8 50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Max. Value 50 Unit °C/W Rev.2.02 12/29/2003 www.SiliconStandard.com 1 of 6 DataSheet 4 U .com www.DataSheet4U.com SSM4410M Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS ∆ BV DSS/∆ Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.037 Max. Units 13.5 22 3 1 25 ±100 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A VGS=4.5V, ID=5A 20 16.6 2.7 10.6 9.6 12.4 25.4 33 745 510 210 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55oC) o VDS=VGS, ID=250uA VDS=15V, ID=10A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= ± 20V ID=10A VDS=15V VGS=5V VDS=25V ID=1A RG=3.3Ω , VGS=5V RD=25Ω VGS=0V VDS=15V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 2.3 50 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25°C, IS=2.3A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on FR4 board, t<10 sec. Rev.2.02 12/29/2003 www.SiliconStandard.com 2 of 6 DataSheet 4 U .com www.DataSheet4U.com SSM4410M 200 150 T C =25 C o V G =10V V G =8.0V T C =150 o C V G =10V V G =8.0V 150 ID , Drain Current (A) ID , Drain Current (A) 100 V G =6.0V 100 V G =6.0V 50 V G =4.0V 50 V G =4.0V 0 0 1 2 3 4 5 6 7 8 0 0 2 4 6 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 20 1.8 I D =10A 18 T C =25 o C 1.6 I D =10A V G =10V RDSON (mΩ ) 16 Normalized R DS(ON) 1.4 1.2 14 1 12 0.8 10 3 4 5 6 7 8 9 10 11 0.6 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature Rev.2.02 12/29/2003 www.SiliconStandard.com 3 of 6 DataSheet 4 U .com www.DataSheet4U.com SSM4410M 12 3 10 2.5 ID , Drain Current (A) 8 2 PD (W) 6 1.5 4 1 2 0.5 0 25 50 75 100 125 150 0 0 30 60 90 120 150 T c , Case Temperature ( o C ) T c , Case Temperature ( C) o Fig 5. Maximum Drain Current v.s. Case Temperature Fig 6. Typical Power Dissipation 100 1 DUTY=0.5 Normalized Thermal Response (R thja) 0.2 10 1ms 0.1 0.1 0.05 ID (A) 10ms 0.02 0.01 PDM 1 100ms 0.01 SINGLE PULSE t T Duty factor = t/T Peak Tj = P DM x Rthja + Ta T c =25 o C Single Pluse 0.1 0.1 1 10 1s 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Rev.2.02 12/29/2003 www.SiliconStandard.com 4 of 6 DataSheet 4 U .com www.DataSheet4U.com SSM4410M 12 10000 f=1.0MHz I D =10A 10 V DS =15V VGS , Gate to Source Voltage (V) 8 1000 Ciss C (pF) 6 Coss Crss 4 100 2 0 0 5 10 15 20 25 10 1 7 13 19 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100.00 3 10.00 2 1.00 VGS(th) (V) 1 0 T j =150 C IS(A) o T j =25 C o 0.10 0.01 0 0.4 0.8 1.2 -50 0 50 100 150 V SD (V) T j , Jujnction Temperature ( C ) o Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage vs. Junction Temperature Rev.2.02 12/29/2003 www.SiliconStandard.com 5 of 6 DataSheet 4 U .com www.DataSheet4U.com SSM4410M VDS RD 90% D VDS TO THE O.


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