HFA35HB120

www.DataSheet4U.com PD-20370 HFA35HB120 HEXFRED Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets TM Ultrafast, Soft Recovery Diode (ISOLATED BASE) VR = 1200V VF = 3.1V Qrr = 510 nC CATHODE ANODE di(rec)M/dt = 350A/µs Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. TM TO-254AA Absolute Maximum Ratings (per Leg) Parameter VR IF @ TC = 100°C IFSM @ TC = 25°C PD @ TC = 25°C TJ TSTG D.C. Reverse Voltage Continuous Forward Current  Single Pulse Forward Current ‚ Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 1200 11 190 83 -55 to +150 Units V A W °C Thermal - Mechanical Characteristics Parameter RθJC Junction-to-Case, Single Leg Conducting Weight Typ. — 9.3 Max. 1.5 — Units °C/W g Note:  D.C. = 50% rect. wave ‚ 1/2 sine wave, 60 Hz , P.W. = 8.33 ms www.irf.com 1 6/30/99 DataSheet 4 U .com www.DataSheet4U.com HFA35HB120 Electrical Characteris...