FDFM2N111 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
August 2005
FDFM2N111
Integrated N-Channel Power...
FDFM2N111 Integrated N-Channel PowerTrench® MOSFET and
Schottky Diode
August 2005
FDFM2N111
Integrated N-Channel PowerTrench® MOSFET and
Schottky Diode
General Description
FDFM2N111 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop
Schottky barrier rectifier in a MicroFET package.
Applications
Standard Buck Converter
Features
This device is designed specifically as a single package solution for Standard Buck Converter. It features a fast switching, low gate charge MOSFET with very low on-state resistance.
4 A, 20 V RDS(ON) = 100mΩ @ VGS = 4.5 V
RDS(ON) = 150mΩ @ VGS = 2.5 V Low Profile - 0.8 mm maximun - in the new package
MicroFET 3x3 mm
PIN 1 A S/C G
C
D
A1 S/C 2
6A 5 S/C
G3
4D
A S/C D
TOP
MLP 3x3
BOTTOM
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDSS VGSS
ID
VRRM IO
PD
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous
-Pulsed
Schottky Repetitive Peak Reverse voltage
Schottky Average Forward Current
Power dissipation (Steady State) Power dissipation (Steady State)
(Note 1a)
(Note 1a) (Note 1a) (Note 1b)
TJ, TSTG Operating and Storage Junction Temperature Range
Ratings 20 ±12 4 10 20 2 1.7 0.8
-55 to +150
Units V V
A
V A
W oC
Thermal Characteristics
RθJA RθJA
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1a)
70
(Note 1b)
150
oC/W oC/W
Package Marking and Ordering Information
Devic...