N-Channel MOSFET
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SAMWIN
General Description Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typic...
Description
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SAMWIN
General Description Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 400 V : 0.55 ohm : 10A : 45 nc : 134 W
SW740
This power MOSFET is produced with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
D
G S
Absolute Maximum Ratings
Symbol
VDSS ID Continuous Drain Current (@Tc=100℃ ) IDM VGS EAS EAR dv/dt PD TSTG,TJ TL Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (@Tc=25℃) Derating Factor above 25℃ Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) 6.3 40 ±30 450 13.4 5.5 134 1.08 -55~+150 300 A A V mJ mJ V/ns W W/℃ ℃ ℃ Drain to Source Voltage Continuous Drain Current (@Tc=25℃)
Parameter
Value
400 10
Units
V A
Thermal Characteristics
Value Symbol
R R R
JC
Units Max
0.93 62.5 ℃/ W ℃/ W ℃/ W
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Min
-
Typ
0.5 -
CS JA
1/6
REV0.2
04.11.1
DataSheet 4 ...
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