MS1408

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1408 RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS Features FM CLASS C TRANSISTOR FREQUENCY 136MHz VOLTAGE 28V POWER OUT 20W POWER GAIN 8.2dB EFFICIENCY 55% COMMON EMITTER DESCRIPTION: The MS1408 is a 28 volt epitaxial silicon NPN planar transistor designed for 108-152MHz AM class C and FM communications. This device utilizes diffused emitter resisters to achieve VSWR at rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO VCEO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature 65 35 65 4 3 30 + 200 - 65 to + 150 V V V V A W °C °C Thermal Data RTH(j-c) Junction-Case Thermal Resistance 5.83 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DataSheet 4 U .com www.DataSheet4U.com MS1408 E LECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Symbol Test Conditions Min. Value Typ. Max. Units BVCBO BVCES BVCEO BVEBO ICBO hFE IC = 200 mA IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5 V IE = 0 V VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 V IC = 200 mA 65 65 35 4 1 5 V V V V mA DYNAMIC Symb...