MS1406

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1406 RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS Features 175MHz 12.5 VOLTS GOLD METALIZATION Pout = 20WATTS Gp = 8.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1406 is a silicon NPN transistor designed for 12.5V AM Class C amplifiers operating in the 118–136 MHz aviation band and for 28V FM Class C amplifiers used in ground station transmitters. Diffused emitter ballast and gold metalization provide maximum ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PD Tj T STG Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Total Dissipation Junction Temperature Storage Temperature Value 65 35 4.0 3.0 30 200 -65 to +200 Unit V V V A W ºC ºC Thermal Data RTH(J-C) Thermal Resistance Junction-case 5.8 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DataSheet 4 U .com www.DataSheet4U.com MS1406 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) Symbol BVCES BVCEO BVEBO ICBO hFE IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5 V STATIC Test Conditions VBE = 0 mA IB = 0 mA IC = 0 mA IE = 0 mA IC = 200 mA Min. 65 35 4.0 --10 Value Typ. ----------- Max. ------1.0 200 Unit ...