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Composite Transistors
XN0121E (XN121E)
Silicon NPN epitaxial planar type
Unit: mm
For switching/digital circuits ■ Features
• Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half
3
2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5
0.16+0.10 –0.06
1.50+0.25 –0.05
2.8+0.2 –0.3
2 0.30+0.10 –0.05 10˚
1
■ Basic Part Number
• UNR221E (UN221E) × 2
1.1+0.2 –0.1
(0.65)
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO IC PT Tj Tstg
Rating 50 50 100 300 150 −55 to +150
Unit V V mA mW °C °C
1: Collector (Tr1) 2: Collector (Tr2) 3: Base (Tr2) EIAJ: SC-74A
0 to 0.1
■ Absolute Maximum Ratings Ta = 25°C
4: Emitter 5: Base (Tr1) Mini5-G1 Package
Marking Symbol: AQ Internal Connection
3 4 5
Tr2
1.1+0.3 –0.1
Tr1 1
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE Ratio * Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE(Small
/Large)
2
Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 kΩ VCC = 5 V, VB = 6 V, RL = 1 kΩ
Min 50 50
Typ
Max
Unit V V µA µA mA
0.1 0.5 0.2 60 0.50 0.99 0.25 4.9 0.2 −30% 47 2.14 +30%
VCE(sat) VOH VOL R1 R1 / R 2 fT
V V V kΩ MHz
VCB = 10 V, IE = −2 mA, f = 200 MHz
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number.
Publication date: June 2003 SJJ00024BED
0.4±0.2
5˚
1
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XN0121E
PT Ta
500
60
IC VCE
IB = 1.0 mA 0.7 mA Ta = 25°C 0.9 mA 0.6 mA 0.8 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
Total power dissipation PT (mW)
400
50
Collector current IC (mA)
10
40 0.3 mA 0.2 mA 0.4 mA 0.5 mA 0.1 mA
300
30
1
Ta = 75°C 25°C
200
20
0.1
100
10
−25°C 0.01 0.1 1 10 100
0
0
0
40
80
120
160
0
2
4
6
8
10
12
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
hFE IC
Collector output capacitance C (pF) (Common base, input open circuited) ob
160 VCE = 10 V
6
Cob VCB
f = 1MHz IE = 0 Ta = 25°C
IO VIN
104 VO = 5 V Ta = 25°C
Forward current transfer ratio hFE
5
25°C −25°C 80
4
Output current IO (µA)
1 10 100
120.