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XN0121E Dataheets PDF



Part Number XN0121E
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN epitaxial planar type
Datasheet XN0121E DatasheetXN0121E Datasheet (PDF)

www.DataSheet4U.com Composite Transistors XN0121E (XN121E) Silicon NPN epitaxial planar type Unit: mm For switching/digital circuits ■ Features • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 3 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 2 0.30+0.10 –0.05 10˚ 1 ■ Basic Part Number • UNR221E (UN221E) × 2 1.1+0.2 –0.1 (0.65) Parame.

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www.DataSheet4U.com Composite Transistors XN0121E (XN121E) Silicon NPN epitaxial planar type Unit: mm For switching/digital circuits ■ Features • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 3 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 2 0.30+0.10 –0.05 10˚ 1 ■ Basic Part Number • UNR221E (UN221E) × 2 1.1+0.2 –0.1 (0.65) Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 300 150 −55 to +150 Unit V V mA mW °C °C 1: Collector (Tr1) 2: Collector (Tr2) 3: Base (Tr2) EIAJ: SC-74A 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 4: Emitter 5: Base (Tr1) Mini5-G1 Package Marking Symbol: AQ Internal Connection 3 4 5 Tr2 1.1+0.3 –0.1 Tr1 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE Ratio * Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE(Small /Large) 2 Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 kΩ VCC = 5 V, VB = 6 V, RL = 1 kΩ Min 50 50 Typ Max Unit V V µA µA mA   0.1 0.5 0.2 60 0.50 0.99 0.25 4.9 0.2 −30% 47 2.14 +30% VCE(sat) VOH VOL R1 R1 / R 2 fT V V V kΩ  MHz VCB = 10 V, IE = −2 mA, f = 200 MHz 150 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number. Publication date: June 2003 SJJ00024BED 0.4±0.2 5˚ 1 DataSheet 4 U .com www.DataSheet4U.com XN0121E PT  Ta 500 60 IC  VCE IB = 1.0 mA 0.7 mA Ta = 25°C 0.9 mA 0.6 mA 0.8 mA VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 100 IC / IB = 10 Total power dissipation PT (mW) 400 50 Collector current IC (mA) 10 40 0.3 mA 0.2 mA 0.4 mA 0.5 mA 0.1 mA 300 30 1 Ta = 75°C 25°C 200 20 0.1 100 10 −25°C 0.01 0.1 1 10 100 0 0 0 40 80 120 160 0 2 4 6 8 10 12 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (mA) hFE  IC Collector output capacitance C (pF) (Common base, input open circuited) ob 160 VCE = 10 V 6 Cob  VCB f = 1MHz IE = 0 Ta = 25°C IO  VIN 104 VO = 5 V Ta = 25°C Forward current transfer ratio hFE 5 25°C −25°C 80 4 Output current IO (µA) 1 10 100 120.


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