STB100NF03L-03-1

www.DataSheet4U.com N-CHANNEL 30V - 0.0026 Ω -100A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET TYPE STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-01 s s s s s STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1 VDSS 30 V 30 V 30 V RDS(on) <0.0032 Ω <0.0032 Ω <0.0032 Ω ID 100 A 100 A 100 A 3 1 3 12 s TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) D2PAK TO-263 (Suffix “T4”) 3 1 2 I2PAK TO-262 (Suffix “-1”) TO-220 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(1) ID(1) IDM() Ptot EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Operating Junction Tempe...