STB11NB40-1

www.DataSheet4U.com N-CHANNEL 400V - 0.48 Ω - 10.7A D2PAK/I2PAK PowerMESH™ MOSFET Table 1. General Features Type STB11NB40 STB11NB40-1 VDSS 400 V 400 V RDS(on) < 0.55 Ω < 0.55 Ω ID 10.7 A 10.7 A STB11NB40 STB11NB40-1 Figure 1. Package FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.48 Ω ■ ■ ■ ■ EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED I2PAK TO-262 3 3 12 1 D2PAK TO-263 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ ■ Figure 2. Internal Schematic Diagram SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE Table 2. Order Codes Part Number STB11NB40T4 STB11NB40-1 Marking B11NB40 B11NB40 Package D2PAK I2PAK Packaging TAPE & REEL TUBE REV. 2 April 2004 1/11 DataSheet 4 U .com www.DataSheet4U.com STB11NB40/STB11NB40-1 Table 3. Absolute Maximum Ratings Symbol VDS VDGR VGS ID ID IDM (1) Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (cont.) at TC = 25 °C Drain Current (cont.) a...