STB11NB40

www.DataSheet4U.com STB11NB40 N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STB11NB40 s s s s s V DSS 400 V R DS(on) < 0.55 Ω ID 10.7 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dV/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 12 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE 3 1 I2PAK TO-262 (suffix ”-1”) D2PAK TO-263 (suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( ) P t ot dv/dt( 1 ) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature o o Value 400 400 ± 30 10.7 6.7 42.8 125 1.0 4.5 -65 to 150 150 (1) ISD ≤ 11A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS...