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SSW-124

Stanford Microdevices

DC-6 GHz High Isolation SPDT GaAs MMIC Switch

www.DataSheet4U.com Product Description Stanford Microdevices’ SSW-124 is a high perfomance Gallium Arsenide Field Effe...


Stanford Microdevices

SSW-124

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Description
www.DataSheet4U.com Product Description Stanford Microdevices’ SSW-124 is a high perfomance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable 8-pin ceramic package. This single-pole, double-throw, non-reflective switch consumes less than 50uA and operates at -5V and 0V for control bias. Its high isolation and low insertion loss, makes it ideal for T/R switching in analog and digital wireless communication systems. The die is fabricated using 0.5 micron FET process with gold metallization and silicon nitride passivation to achieve excellent performance and reliability. SSW-124 Preliminary Preliminary DC-6 GHz High Isolation SPDT GaAs MMIC Switch Product Features • High Isolation: 42dB at 2GHz, 30dB at 6GHz • Low DC Power Consumption • Non-reflective (50 Ohm termination) when • Broadband Performance - True DC Operation • Low Cost Surface-Mountable Ceramic Package Applications • Analog/Digital Wireless System • Spread Spectrum • GPS Isolated Isolation vs. Frequency VControl = -5 V -30 -40 dB -50 -60 -70 DC 1 2 3 4 5 6 GHz Electrical Specifications at Ta = 25C Sy mbol Ins Parameters: Test C onditions Inserti on Loss f = 0.05-2.0GHz f = 2.00-4.0GHz f = 4.00-6.0GHz f = 0.05-2.0GHz f = 2.00-4.0GHz f = 4.00-6.0GHz f = 0.05-2.0GHz f = 2.00-4.0GHz f = 4.00-6.0GHz f = 0.05-1.0GHz f = 1.00-2.0GHz f = 2.00-4.0GHz V = -5V V = -8V V = -5V V = -8V dB m dB m dB dB uA nsec U nits dB dB dB dB dB dB 40 30 25 Min. Ty p. 0.7 1.0 1.4 50 40 30 1.15 ...




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