SBE805

www.DataSheet4U.com Ordering number : ENN7291 SBE805 Silicon Schottky Barrier Diode SBE805 30V, 500mA Rectifier Features Package Dimensions unit : mm 1294 [SBE805] 2.9 0.15 1 0.95 2 0.4 0.6 1.6 2.8 Low forward voltage (VF max=0.55V). Fast reverse recovery time (trr max=10ns). Composite type with 2 diodes contained in the CPH package currently in use, improving the mounting efficiency greatly. The chips incorporated are both equivalent to the SB05-03C. 5 4 3 0.6 0.05 1 : Cathode 2 : Cathode 3 : Anode 4 : No Contact 5 : Anode SANYO : CPH5 0.2 Specifications Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle Conditions 0.4 0.7 0.9 Ratings 30 35 500 5 --55 to +125 --55 to +125 0.2 Unit V V mA A °C °C Electrical Characteristics at Ta=25°C (Value per element) Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance Symbol VR VF IR C trr Rth(j-a) IR=150µA IF=500mA VR=15V VR=10V, f=1MHz IF=IR=100mA, see specified Test Circuit. Conditions Ratings min 30 0.55 30 16 10 300 typ max Unit V V µA pF ns °C / W Marking : SE Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high le...