K596

www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO- 92S 1.SOURCE K596 Si N-CHANNEL JUNCTION FET FEATURES Power dissipation PCM: 0.1W£¨ Tamb=25¡æ£© Gate Current I G: 10mA Drain current I D : 1mA Drain-Source voltage BVGDO: -20 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Gate-Drain breakdown Voltage Gate-Source cut-off Voltage Drain Current Forward Transfer Admittance Input Capacitance Symbol 2.GATE 3.DRAIN 123 unless otherwise specified£© MIN -20 -0.6 100 0.4 1.2 3.5 -1.5 800 TYP MAX UNIT V V ¦Ì A mS pF Test conditions IG= -100¦Ì A BVGDO DataSheet4U.com VGS(off) IDSS |YFS| Ciss VDS= 5V , ID=1¦Ì A VDS= 5 V , VGS=0 VDS= 5V , VGS=0, f=1KHz VDS=5V, VGS=0, f=1MHz VDS= 5 V, V GS=0 DataShee Output Capacitance CRSS 0.65 pF f = 1MHz IDSS Classification Classification IDSS (µA) A 100-170 B 150-240 C 210-350 D 320-480 E 440-800 DataSheet4U.com www.DataSheet4U.com et4U.com DataSheet4U.com DataShee DataSheet4U.com www.DataSheet4U.com TO-92S PACKAGE OUTLINE DIMENSIONS D D1 ¦È A E b L et4U.com DataSheet4U.com e e1 Symbol A A1 b c D D1 E e e1 L ¦È Dimensions In Millimeters Min 1.240 0.660 0.380 0.360 3.850 2.970 3.010 1.270TYP 2.440 15.100 45°TYP 2.640 15.500 Max 1.620 0.860 0.550 0.510 4.150 3.270 3.310 Min A1 Dimensions In Inches Max 0.064 0.034 0.022 0.020 0.163 0.129 0.130 0.050TYP 0.096 0.594 45°TYP 0.10...