N-CHANNEL SuperMESH MOSFET
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STW29NK50ZD
N-CHANNEL 500 V - 0.11Ω - 29A TO-247 Fast Diode SuperMESH™ MOSFET
PRODUCT PREVIEW
Tabl...
Description
www.DataSheet4U.com
STW29NK50ZD
N-CHANNEL 500 V - 0.11Ω - 29A TO-247 Fast Diode SuperMESH™ MOSFET
PRODUCT PREVIEW
Table 1: General Features
TYPE STW29NK50ZD
s s s s s s
Figure 1: Package
ID 29 A PW 350 W
VDSS 500 V
RDS(on) < 0.15 Ω
s
TYPICAL RDS(on) = 0.11 Ω HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY FAST INTERNAL RECOVERY TIME
3 2 1
TO-247
DESCRIPTION The Fast SuperMesh™ series associates all adFigure 2: Internal Schematic Diagram vantages of reduced on-resistance, zener gate protection and very goog dv/dt capability with a DataSheet4U.com Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology.
DataShee
APPLICATIONS s HID BALLAST s ZVS PHASE-SHIFT FULL BRIDGE
Table 2: Order Codes
PART NUMBER STW29NK50ZD MARKING W29NK50ZD PACKAGE TO-247 PACKAGING TUBE
DataSheet4U.com
December 2004
Rev. 2 1/7
www.DataSheet4U.com
STW29NK50ZD
Table 3: Absolute Maximum ratings
Symbol VDS VDGR VGS ID ID IDM(*) PTOT VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 KΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ) Peak Diode Recovery voltage slope Storage Temperature Operating Junction Temperature Value 500 500 ± 30 29 18.27 116 350 2.77 6000 4.5 ...
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