N-CHANNEL SuperMESH MOSFET
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STW29NK50Z
N-CHANNEL 500 V - 0.105Ω - 31A TO-247 Zener-Protected SuperMESH™ MOSFET
Table 1: General...
Description
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STW29NK50Z
N-CHANNEL 500 V - 0.105Ω - 31A TO-247 Zener-Protected SuperMESH™ MOSFET
Table 1: General Features
TYPE STW29NK50Z
I I I I I I
Figure 1: Package
ID 31 A PW 350 W
VDSS 500 V
RDS(on) < 0.13 Ω
TYPICAL RDS(on) = 0.105 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-247
3 2 1
DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established Figure 2: Internal Schematic Diagram strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dtDataSheet4U.com capability for the most demanding application. Such series complements ST full range of high vltage MOSFETs including revolutionary MDmesh™ products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING I IDEAL FOR OFF-LINE POWER SUPPLIES I WELDING MACHINES I LIGHTING
I
DataShee
Table 2: Order Codes
PART NUMBER STW29NK50Z MARKING W29NK50Z PACKAGE TO-247 PACKAGING TUBE
DataSheet4U.com
Rev. 1 October 2004 1/10
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STW29NK50Z
Table 3: Absolute Maximum ratings
Symbol VDS VDGR VGS ID ID IDM (*) PTOT VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (R GS = 20 K Ω) Gate- source Voltage Drain Current (continuous) at T C = 25°C Drain Current (continuous) at T C = 100°C Drain Current (pulsed) Total Dissipation at T C = 25°C Derating Factor G...
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