ECH8401

www.DataSheet4U.com Ordering number : ENN7609 ECH8401 N-Channel Silicon MOSFET ECH8401 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions unit : mm 2222 [ECH8401] 0.25 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.3 0.15 8 5 2.3 2.8 0.65 2.9 Top View 0.25 1 4 0.9 0.07 Bottom View 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg DataSheet4U.com DataShe Ratings 20 ±12 10 Unit V V A A W °C °C e Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 40 1.6 150 --55 to +150 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA Ratings min 20 1 ±10 0.5 1.3 typ max Unit V µA µA V Marking : KA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonabl...