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STB80NF55L-08 Dataheets PDF



Part Number STB80NF55L-08
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL POWER MOSFET
Datasheet STB80NF55L-08 DatasheetSTB80NF55L-08 Datasheet (PDF)

www.DataSheet4U.com STP80NF55L-08 STB80NF55L-08 N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE STP80NF55L-08 STB80NF55L-08 s s s VDSS 55 V 55 V RDS(on) 0.008Ω 0.008Ω ID 80 A 80 A TYPICAL RDS(on) = 0.0065Ω LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE 1 3 3 2 1 TO-220 D2PAK DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting tranINTERNAL SCHEMATIC DIAGRAM sis.

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www.DataSheet4U.com STP80NF55L-08 STB80NF55L-08 N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE STP80NF55L-08 STB80NF55L-08 s s s VDSS 55 V 55 V RDS(on) 0.008Ω 0.008Ω ID 80 A 80 A TYPICAL RDS(on) = 0.0065Ω LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE 1 3 3 2 1 TO-220 D2PAK DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting tranINTERNAL SCHEMATIC DIAGRAM sistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. DataSheet4U.com APPLICATIONS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID (1) ID (1) IDM ( ) PTOT dv/dt (2) EAS(3) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 55 55 ± 16 80 80 320 300 2 15 870 –55 to 175 175 (1) Current Limited by Package (2) ISD ≤80A, di/dt ≤ 500A/µs, VDD =40V Tj ≤ TJMAX. (3) Starting Tj=25°C, ID=40A, VDD=40V DataShee Unit V V V A A A W W/°C V/ns mJ °C °C (q ) Pulse width limited by safe operating area April 2003 1/8 DataSheet4U.com www.DataSheet4U.com STP80NF55L-08 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.5 62.5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 16V Min. 55 1 10 ±100 Typ. Max. Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10 V, ID = 40 A VGS = 5 V, ID = 40 A Min. 1 Typ. 1.6 0.0065 0.008 Max. 2.5 0.008 0.01 Unit V Ω Ω DYNAMIC Symbol gfs Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDataSheet4U.com DS =15V , ID =40 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 150 4350 800 260 Max. Unit S pF pF pF et4U.com DataShee 2/8 DataSheet4U.com www.DataSheet4U.com STP80NF55L-08 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 27V, ID = 40A RG = 4.7Ω VGS = 4.5V (see test circuit, Figure 3) VDD = 27.5 V, ID = 80A, VGS = 4.5V Min. Typ. 35 145 75 20 30 100 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 27V, ID = 40A, RG = 4.7Ω, VGS = 4.5V (see test circuit, Figure 3) Min. Typ. 85 65 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (2) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80A, VGS = 0 ISD = 80A, di/dt = 100A/µs, VDD = 20V, Tj = 150°C (see test circuit, Figure 5) 85 280 6.5 Test Conditions Min. Typ. Max. 80 320 1.5 Unit A A V ns nC A et4U.com Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. DataSheet4U.com 2. Pulse width limited by safe operating area. DataShee 3/8 DataSheet4U.com www.DataSheet4U.com STP80NF55L-08 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit et4U.com DataSheet4U.com DataShee Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/8 DataSheet4U.com www.DataSheet4U.com STP80NF55L-08 TO-220 MECHANICAL DATA mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 øP Q et4U.com DataSheet4U.com DataShee 5/8 DataSheet4U.com www.DataSheet4U.com STP80NF55L-08 D2PAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0º 4.88 15 1.27 1.4 2.4 0.4 4º 10 8.5 5.28 15.85 1.4 DataSheet4U.com 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14.


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