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STD6N10
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STD6N10
s s s s s s s s
V DSS 100 V
R DS( on) < 0.45 Ω
ID 6A
s
s
TYPICAL RDS(on) = 0.35 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARAC...
