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STD60NF55L Dataheets PDF



Part Number STD60NF55L
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL POWER MOSFET
Datasheet STD60NF55L DatasheetSTD60NF55L Datasheet (PDF)

www.DataSheet4U.com N-CHANNEL 55V - 0.012Ω - 60A DPAK STripFET™ II POWER MOSFET TYPE STD60NF55L s s s STD60NF55L VDSS 55V RDS(on) < 0.015Ω ID 60A TYPICAL RDS(on) = 0.012Ω LOW THRESHOLD DRIVE ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL 3 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and les.

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www.DataSheet4U.com N-CHANNEL 55V - 0.012Ω - 60A DPAK STripFET™ II POWER MOSFET TYPE STD60NF55L s s s STD60NF55L VDSS 55V RDS(on) < 0.015Ω ID 60A TYPICAL RDS(on) = 0.012Ω LOW THRESHOLD DRIVE ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL 3 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.. DPAK TO-252 INTERNAL SCHEMATIC DIAGRAM DataSheet4U.com APPLICATIONS s AUTOMOTIVE s MOTOR CONTROL DataShee ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 55 55 ± 15 60 42 240 110 0.73 16 400 – 55 to 175 (1)ISD ≤40A, di/dt ≤350A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (2) Starting Tj=25°C, ID=30A, VDD=20V Unit V V V A A A W W/°C V/ns mJ °C (q) Pulse width limited by safe operating area April 2002 1/9 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STD60NF55L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.36 62.5 275 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 15 V Min. 55 1 10 ±100 Typ. Max. Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10 V, ID = 30 A VGS = 5 V, ID = 30 A Min. 1 0.012 0.014 Typ. Max. 2 0.015 0.017 Unit V Ω Ω et4U.com DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance DataSheet4U.com Test Conditions VDS = 10 V, ID = 30 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 35 1950 390 130 Max. Unit S pF pF pF DataShee 2/9 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STD60NF55L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 25 V, ID = 30 A RG = 4.7Ω VGS = 4.5V (see test circuit, Figure 3) VDD = 40 V, ID = 60 A, VGS = 5 V Min. Typ. 30 180 40 10 20 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 25 V, ID = 30 A, RG = 4.7Ω, VGS = 4.5V (see test circuit, Figure 3) Min. Typ. 80 35 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 60A, VGS = 0 ISD = 40 A, di/dt = 100 A/µs, VDataSheet4U.com DD = 25 V, T j = 150 °C (see test circuit, Figure 5) 65 130 4 Test Conditions Min. Typ. Max. 60 240 1.3 Unit A A V ns nC A et4U.com DataShee Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/9 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STD60NF55L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance et4U.com DataSheet4U.com DataShee Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STD60NF55L Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics et4U.com DataSheet4U.com DataShee 5/9 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STD60NF55L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit et4U.com DataSheet4U.com DataShee Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STD60NF55L TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0..


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