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N-CHANNEL 55V - 0.012Ω - 60A DPAK STripFET™ II POWER MOSFET
TYPE STD60NF55L
s s s
STD60NF55L
VDSS 55V
RDS(on) < 0.015Ω
ID 60A
TYPICAL RDS(on) = 0.012Ω LOW THRESHOLD DRIVE ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
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DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility..
DPAK TO-252
INTERNAL SCHEMATIC DIAGRAM
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APPLICATIONS s AUTOMOTIVE s MOTOR CONTROL
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ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 55 55 ± 15 60 42 240 110 0.73 16 400 – 55 to 175
(1)ISD ≤40A, di/dt ≤350A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (2) Starting Tj=25°C, ID=30A, VDD=20V
Unit V V V A A A W W/°C V/ns mJ °C
(q) Pulse width limited by safe operating area
April 2002
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STD60NF55L
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.36 62.5 275 °C/W °C/W °C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 15 V Min. 55 1 10 ±100 Typ. Max. Unit V µA µA nA
ON (1)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10 V, ID = 30 A VGS = 5 V, ID = 30 A Min. 1 0.012 0.014 Typ. Max. 2 0.015 0.017 Unit V Ω Ω
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DYNAMIC
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
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Test Conditions VDS = 10 V, ID = 30 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 35 1950 390 130 Max. Unit S pF pF pF
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STD60NF55L
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 25 V, ID = 30 A RG = 4.7Ω VGS = 4.5V (see test circuit, Figure 3) VDD = 40 V, ID = 60 A, VGS = 5 V Min. Typ. 30 180 40 10 20 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 25 V, ID = 30 A, RG = 4.7Ω, VGS = 4.5V (see test circuit, Figure 3) Min. Typ. 80 35 Max. Unit ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 60A, VGS = 0 ISD = 40 A, di/dt = 100 A/µs, VDataSheet4U.com DD = 25 V, T j = 150 °C (see test circuit, Figure 5) 65 130 4 Test Conditions Min. Typ. Max. 60 240 1.3 Unit A A V ns nC A
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Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
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STD60NF55L
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source On Resistance
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Gate Charge vs Gate-source Voltage
Capacitance Variations
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STD60NF55L
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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STD60NF55L
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
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Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STD60NF55L
TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0..