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Ordering number : ENA0188
2SB817C / 2SD1047C
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2SB817C / 2SD1047C
Features
• • ...
www.DataSheet4U.com
Ordering number : ENA0188
2SB817C / 2SD1047C
www.DataSheet4U.com
2SB817C / 2SD1047C
Features
PNP Epitaxial Planar Silicon
Transistor NPN Triple Diffused Planar Silicon
Transistor
140V / 12A, AF 80W Output Applications
Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process.
Specifications ( ) : 2SB817C
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings (--)160 (--)140 (--)6 (--)12 (--)20 2.5 120 150 --55 to +150 Unit V V V A A W W °C °C
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Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Base-to-Emitterr Voltage Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol ICBO IEBO hFE1 hFE2 fT Cob VBE VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Conditions VCB=(--)160V, IE=0A VEB=(--)4V, IC=0A VCE=(--)5V, IC=(--)1A VCE=(--)5V, IC=(--)5A VCE=(--)5V, IC=(--)1A VCB=(--)10V, f=1MHz VCE=(--)5V, IC=(--)5A IC=(--)5A, IB=(--)0.5A IC=(--)5mA, IE=0A IC=(--)50mA, RBE=∞ IE=(--)5mA, IC=0A (--)160 (--)140 (--)6 Ratings min typ max (--)0.1 (--)0.1 100 35 (1...
