MT28F800B5

www.DataSheet4U.com 8Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY FEATURES MT28F008B5 MT28F800B5 5V Only, Dual Supply (Smart 5) 0.18µm Process Technology Eleven erase blocks: 16KB/8K-word boot block (protected) 40-Pin TSOP Type I 48-Pin TSOP Type I Two 8KB/4K-word parameter blocks Eight main memory blocks Smart 5 technology (B5): 5V ±10% VCC 5V ±10% VPP application/ production programming1 Advanced 0.18µm CMOS floating-gate process 44-Pin SOP2 Compatible with 0.3µm Smart 5 device Address access time: 80ns 100,000 ERASE cycles Industry-standard pinouts Automated write and erase algorithm Two-cycle WRITE/ERASE sequence DataShee TSOP and SOP packaging options Byte- or word-wide READ and WRITE DataSheet4U.com (MT28F800B5, 1 Meg x 8/512K x 16) GENERAL DESCRIPTION The MT28F008B5 (x8) and MT28F800B5 (x16/x8) OPTIONS MARKING are nonvolatile, electrically block-erasable (Flash), Timing programmable read-only memories containing 80ns -8 8,388,608 bits organized as 524,288 words (16 bits) or Configurations 1,048,576 bytes (8 bits). Writing or erasing the device is 1 Meg x 8 MT28F008B5 done with a 5V VPP voltage, while all operations are 512K x 16/1 Meg x 8 MT28F800B5 performed with a 5V VCC. Due to process technology Boot Block Starting Word Address advances, 5V VPP is optimal for application and proTop T duction programming. These devices are fabricated Bottom B with Micron’s advanced 0.18µm CMOS floating-gate Operating Temperature Range process. ...