MS2206

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2206 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features 1025-1150 MHz GOLD METALLIZATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS Pout = 4 W MINIMUM GP= 10 dB COMMON BASE CONFIGURATION .280 4LSL (M115) Epoxy Sealed DESCRIPTION: The MS2206 is a common base, silicon NPN microwave transistor designed for Class C driver applications under DME or IFF pulse DataSheet4U.com conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. DataShee ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol PDISS VCE TJ IC T STG Parameter Power Dissipation Collector-Emitter Bias Voltage Junction Temperature Device Current Storage Temperature Value 7.5 37 200 1.0 -65 to +200 Unit W V ºC A ºC Thermal Data RTH(J-C) Junction-case Thermal Resistance* 35 ° C/W DataSheet4U.com Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DataSheet 4 U .com www.DataSheet4U.com MS2206 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) Symbol BVCBO BVCEO BVEBO ICES HFE IC = 1 mA IC = 5 mA IE = 1.0 mA VCE = 35 V VCE = 5 V STATIC Test Conditions IE = 0 mA IB = 0mA IC = 0 mA IC = 100 mA Min. 45 20 3.5 --20 Value Typ. ----------- Max. ------1.0 120 Unit V V V mA --- DYNAMIC Sym...