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SFD60N03L

SemiWell Semiconductor

Logic N-Channel MOSFET

www.DataSheet4U.com SFD60N03L Electrical Characteristics Symbol Off Characteristics BVDSS Δ BVDSS/ Δ TJ IDSS Drain-Sour...



SFD60N03L

SemiWell Semiconductor


Octopart Stock #: O-555642

Findchips Stock #: 555642-F

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www.DataSheet4U.com SFD60N03L Electrical Characteristics Symbol Off Characteristics BVDSS Δ BVDSS/ Δ TJ IDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 30 0.02 1 10 100 -100 V V/°C uA uA nA nA ( TC = 25 °C unless otherwise noted ) Parameter Test Conditions Min Typ Max Units Breakdown Voltage Temperature coefID = 250uA, referenced to 25 °C ficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-Source Leakage, Reverse VDS = 30V, VGS = 0V VDS = 24V, TC = 125 °C VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VDS = VGS, ID = 250uA VGS = 10 V, ID = 24A VGS = 5 V, ID = 24A IGSS On Characteristics VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance 1.0 0.0116 0.0146 3.0 0.0135 0.0190 V Ω Dynamic Characteristics Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 1010 450 130 1320 585 170 pF Dynamic Characteristics Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) DataSheet4U.com VDD =15V, ID =30A, RG =50Ω ※ see fig. 13. (Note 4, 5) - 20 55 50 75 21.5 3.6 10.7 50 120 110 160 28 nC ns DataShee VDS =24V, VGS =5V, ID =60A ※ see fig. 12. (Note 4, 5) Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditi...




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