N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Description
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STW5NA90 STH5NA90FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
PRELIMINARY DATA TYPE ST W5NA90 ST H5NA90F I
s s
V DSS 900 V 900 V
R DS(on) < 2.5 Ω < 2.5 Ω
ID 5.3 A 3.5 A
s s s s
TYPICAL RDS(on) = 2.1 Ω ± 30 V GATE-TO-SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC GATE CHARGE MINIMISED REDUCED ...
