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STW9NA60 STH9NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STW 9NA60 STH9N...
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STW9NA60 STH9NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS
TRANSISTOR
TYPE STW 9NA60 STH9NA60F I
s s s s s s s
V DSS 600 V 600 V
R DS(on) < 0.8 Ω < 0.8 Ω
ID 9.5 A 6.4 A
TYPICAL RDS(on) = 0.69 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
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2
3
2 1
3
TO-247 ISOWATT218 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE INTERNAL SCHEMATIC DIAGRAM POWER SUPPLIES AND MOTOR DRIVE DataSheet4U.com
DataShee
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value ST W9NA60 V DS V DGR V GS ID ID I DM ( ) P tot V ISO Ts tg Tj Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Un it
STH9NA60F I 600 600 ± 30 V V V 9.5 6 38 160 1.28 4000 A A A W W /o C V
o o
6.4 4 38 70 0.56 -65 to 150 150
C C
() Pulse width limited by safe operating area
October 1998
1/10
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STW9NA60-STH9NA60FI
THERMAL DATA
TO-247 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 0.78 30 0.1 300 ...