SSH25N40A

www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 400V Low RDS(ON) : 0.162 Ω (Typ.) SSH25N40A BVDSS = 400 V RDS(on) = 0.2 Ω ID = 25 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 ” from case for 5-seconds Ο Ο Ο Value 400 25 15.1 1 O Units V A A V mJ A mJ V/ns W W/ C Ο DataSheet4U.com Gate-to-Source Voltage 2 O 1 O 1 O 3 O 100 + _ 30 1429 25 27.8 4.0 278 2.22 - 55 to +150 DataShee Ο C 300 Thermal Resistance Symbol R θJC R θCS R θJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.24 -Max. 0.45 -40 Ο Units C /W Rev. B ©1999 Fairchild Semiconductor Corporation DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com SSH25N40A Electrical Characteristics (TC=25 Symbol BVDSS ∆ BV/ ∆ TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage B...