M53233200CE0

www.DataSheet4U.com DRAM MODULE M53233200CE0/CJ0-C 4Byte 32Mx32 SIMM (16Mx4 base) DataSheet4U.com DataSh ee Revision 0.0 June 1999 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DRAM MODULE Revision History Version 0.0 (June 1999) The 4th. generation of 64Mb DRAM components are applied for this module. M53233200CE0/CJ0-C et4U.co m DataSheet4U.com DataSh ee DataSheet4U.com DataSheet4 U .com www.DataSheet4U.com DRAM MODULE M53233200CE0/CJ0-C EDO Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung M53233200CE0/CJ0-C is a 32Mx32bits Dynamic RAM high density memory module. The Samsung M53233200CE0/CJ0-C consists of sixteen CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The M53233200CE0/CJ0-C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. M53233200CE0/CJ0-C FEATURES Part Identification - M53233200CE0-C(4K cycles/64ms Ref, SOJ, Solder) - M53233200CJ0-C(4K cycles/64ms Ref, SOJ, Gold) Extended Data Out Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5V±10% power supply JEDEC standard PDpin & pinout PCB : Height(1420mil), double sided component PERFORMANCE RANGE Speed -C50 -C60 tRAC 50ns 60ns tCAC 13ns 15ns tRC 84ns 104ns tHPC ...