M53231600BE0

www.DataSheet4U.com DRAM MODULE M53231600BE0/BJ0-C 4Byte 16Mx32 SIMM (16Mx4 base) DataSheet4U.com DataShee Revision 0.1 June 1998 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DRAM MODULE Revision History Version 0.0 (Sept. 1997) M53231600BE0/BJ0-C Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) The 3rd. generation of 64M DRAM components are applied for this module. et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet4 U .com www.DataSheet4U.com DRAM MODULE M53231600BE0/BJ0-C EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung M53231600BE0/BJ0-C is a 16Mx32bits Dynamic RAM high density memory module. The Samsung M53231600BE0/BJ0-C consists of eight CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The M53231600BE0/BJ0-C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. M53231600BE0/BJ0-C FEATURES Part Identification - M53231600BE0-C(4K cycles/64ms Ref, SOJ, Solder) - M53231600BJ0-C(4K cycles/64ms Ref, SOJ, Gold) Extended Data Out Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5V±10% power supply JEDEC standard PDpin & pinout ...