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M53230400DB0 Dataheets PDF



Part Number M53230400DB0
Manufacturers Samsung Semiconductor
Logo Samsung Semiconductor
Description (M532304x0DB0/DW0) DRAM Module
Datasheet M53230400DB0 DatasheetM53230400DB0 Datasheet (PDF)

www.DataSheet4U.com DRAM MODULE M53230400DW0/DB0 & M53230410DW0/DB0 EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION The Samsung M5323040(1)0D is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M5323040(1)0D consists of eight CMOS 4Mx4bits DRAMs in 24-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The M5323040(1)0D is a Single In-line Memory Module .

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www.DataSheet4U.com DRAM MODULE M53230400DW0/DB0 & M53230410DW0/DB0 EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION The Samsung M5323040(1)0D is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M5323040(1)0D consists of eight CMOS 4Mx4bits DRAMs in 24-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The M5323040(1)0D is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. M53230400DW0/DB0 M53230410DW0/DB0 FEATURES • Part Identification - M53230400DW0-C(4096 cycles/64ms Ref, SOJ, Solder) - M53230400DB0-C(4096 cycles/64ms Ref, SOJ, Gold) - M53230410DW0-C(2048 cycles/32ms Ref, SOJ, Solder) - M53230410DB0-C(2048 cycles/32ms Ref, SOJ, Gold) • Extended Data Out • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • TTL compatible inputs and outputs • Single +5V±10% power supply • 1st Gen. JEDEC standard PDPin & pinout • PCB : Height(1000mil), single sided component PERFORMANCE RANGE Speed -50 -60 tRAC 50ns 60ns tCAC 13ns 15ns tRC 90ns 110ns tHPC 25ns 30ns PIN CONFIGURATIONS Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ0 DQ16 DQ1 DQ17 DQ2 DQ18 DQ3 DQ19 Vcc NC A0 A1 A2 A3 A4 A5 A6 A10 DQ4 DQ20 DQ5 DQ21 DQ6 DQ22 DQ7 DQ23 A7 A11 Vcc A8 A9 Res(RAS1) RAS0 NC NC Pin 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 Symbol NC NC VSS CAS0 CAS2 CAS3 CAS1 RAS0 Res(RAS1) NC W NC DQ8 DQ24 DQ9 DQ25 DQ10 DQ26 DQ11 DQ27 DQ12 DQ28 VCC DQ29 DQ13 DQ30 DQ14 DQ31 DQ15 NC PD1 PD2 PD3 PD4 NC Vss PIN NAMES Pin Name A0 - A11 Function Address Inputs(4K Ref) Address Inputs(2K Ref) Data In/Out Read/Write Enable Row Address Strobe Column Address Strobe Presence Detect Power(+5V) Ground No Connection DataShee DataSheet4U.com W RAS0 A0 - A10 DQ0 - DQ31 CAS0 - CAS3 PD1 -PD4 Vcc Vss NC PRESENCE DETECT PINS (Optional) Pin PD1 PD2 PD3 PD4 50NS Vss NC Vss Vss 60NS Vss NC NC NC * Pin connection changing available SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. * NOTE : A11 is used for only M53230400DW0/DB0 (4K ref.) DataSheet4U.com DataSheet4 U .com www.DataSheet4U.com DRAM MODULE FUNCTIONAL BLOCK DIAGRAM M53230400DW0/DB0 M53230410DW0/DB0 CAS0 RAS0 DQ0 CAS DQ1 U0 RAS DQ2 A0OE W A11(A10) DQ3 DQ0 CAS DQ1 U1 RAS DQ2 A0OE W A11(A10) DQ3 DQ0-DQ3 DQ4-DQ7 CAS1 DQ0 CAS DQ1 U2 RAS DQ2 A0OE W A11(A10) DQ3 DQ0 CAS DQ1 U3 RAS DQ2 A0OE W A11(A10) DQ3 DQ8-DQ11 DQ12-DQ15 et4U.com CAS2 DQ0 CAS DQ1 U4 RAS DQ2 A0OE W A11(A10) DQ3 DataSheet4U.com DQ0 CAS DQ1 U5 RAS DQ2 A0OE W A11(A10) DQ3 DQ16-DQ19 DataShee DQ20-DQ23 CAS3 DQ0 CAS U6 DQ1 RAS DQ2 A0OE W A11(A10) DQ3 DQ0 CAS DQ1 U7 RAS DQ2 A0OE W A11(A10) DQ3 DQ24-DQ27 DQ28-DQ31 W A0-A11(A10) Vcc .1 or .22uF Capacitor for each DRAM Vss To all DRAMs DataSheet4U.com DataSheet4 U .com www.DataSheet4U.com DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol VIN, VOUT VCC Tstg Pd IOS M53230400DW0/DB0 M53230410DW0/DB0 Rating -1 to +7.0 -1 to +7.0 -55 to +150 8 50 Unit V V °C W mA * Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70°C) Item Supply Voltage Ground Input High Voltage Input Low Voltage *1 : VCC+2.0V/20ns, Pulse width is measured at VCC. *2 : -2.0V/20ns, Pulse width is measured at VSS. Symbol VCC VSS VIH VIL Min 4.5 0 2.4 -1.0*2 Typ 5.0 0 Max 5.5 0 VCC+1*1 0.8 Unit V V V V DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted) Symbol ICC1 ICC2 ICC3 ICC4 ICC5 ICC6 II(L) IO(L) VOH VOL ICC1 ICC2 ICC3 ICC4 ICC5 ICC6 II(L) IO(L) VOH VOL Speed -50 -60 Don′t care -50 -60 -50 -60 Don′t care -50 -60 Don′t care Don′t care M53230400DW0/DB0 Min - M53230410DW0/DB0 Min - Max 720 640 Max 880 800 16 880 800 720 640 8 880 800 40 5 0.4 Unit mA mA mA mA mA mA mA mA mA mA uA uA V V et4U.com DataShee -40 -5 2.4 - DataSheet4U.com 16 720 640 640 560 8 720 640 40 5 0.4 - - -40 -5 2.4 - : Operating Current * (RAS, CAS, Address cycling @tRC=min) : Standby Current (RAS=CAS=W=VIH) : RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min) : EDO Mode Current * (RAS=VIL, CAS Address cycling : tHPC=min) : Standby Current (RAS=CAS=W=Vcc-0.2V) : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min) : Input Leakage Current (Any input 0≤VIN≤Vcc+0.5V, all other pins not under test=0 V).


M53230400DW0 M53230400DB0 M53230410DB0


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