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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Line
NPN Silicon RF Power Transistor
Designed primarily for wideband large–signal output and driver amplifier stages in the 400 to 512 MHz frequency range. • Specified 28 Volt, 470 MHz Characteristics Output Power = 80 Watts Minimum Gain = 7.3 dB Efficiency = 50% (Min) • Built–In Matching Network for Broadband Operation • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability Applications
MRF338
80 W, 400 to 512 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON
CASE 333–04, STYLE 1
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range
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Symbol VCEO VCBO VEBO IC PD Tstg
Value 30 60 4 9 12 250 1.43 – 65 to +150
Unit Vdc Vdc Vdc Adc Watts W/°C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 0.7 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 80 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 80 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 8 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)EBO 30 60 4 — — — — — — Vdc Vdc Vdc
(1) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. (2) Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
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REV 2
RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997
MRF338 1
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ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Base Breakdown Voltage (IC = 80 mAdc, IE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CBO ICBO 60 — — — — 5 Vdc mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 4 Adc, VCE = 5 Vdc) hFE 20 — 80 —
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1 MHz) Cob — 95 125 pF
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 80 W, f = 470 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 80 W, f = 470 MHz) Load Mismatch (VCC = 28 Vdc, Pout = 80 W, f = 470 MHz, VSWR = 30:1, All Phase Angles at Frequency of Test) GPE η ψ No Degradation in Output Power 7.3 50 8.8 60 — — dB %
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C12 DataSheet4U.com L3 C11 R1 DUT RF INPUT Z1 L1 C1 BEAD C5 C2 C3 C4 C6 L2
RFC1 C14 R2 C13 + –
L4 + C15
VCC 28 V
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C10 Z2 Z3 Z4
RF OUTPUT
C7
C8
C9
Bead C1, C2, C8, C9 C3, C4, C6, C7 C5, C10 C11, C13 C12, C14 C15 L1 L2
Ferroxcube #56–590–65/3B 0.8 – 20 pF, Johanson (JMC 5501) 25 pF, 100 V, Underwood 100 pF, 100 .