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MRF338 Dataheets PDF



Part Number MRF338
Manufacturers Motorola
Logo Motorola
Description BROADBAND RF POWER TRANSISTOR
Datasheet MRF338 DatasheetMRF338 Datasheet (PDF)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF338/D The RF Line NPN Silicon RF Power Transistor Designed primarily for wideband large–signal output and driver amplifier stages in the 400 to 512 MHz frequency range. • Specified 28 Volt, 470 MHz Characteristics Output Power = 80 Watts Minimum Gain = 7.3 dB Efficiency = 50% (Min) • Built–In Matching Network for Broadband Operation • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Me.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF338/D The RF Line NPN Silicon RF Power Transistor Designed primarily for wideband large–signal output and driver amplifier stages in the 400 to 512 MHz frequency range. • Specified 28 Volt, 470 MHz Characteristics Output Power = 80 Watts Minimum Gain = 7.3 dB Efficiency = 50% (Min) • Built–In Matching Network for Broadband Operation • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability Applications MRF338 80 W, 400 to 512 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 333–04, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range DataShee DataSheet4U.com Symbol VCEO VCBO VEBO IC PD Tstg Value 30 60 4 9 12 250 1.43 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 0.7 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 80 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 80 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 8 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)EBO 30 60 4 — — — — — — Vdc Vdc Vdc (1) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. (2) Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. DataSheet4U.com REV 2 RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997 MRF338 1 DataSheet 4 U .com www.DataSheet4U.com ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Base Breakdown Voltage (IC = 80 mAdc, IE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CBO ICBO 60 — — — — 5 Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 4 Adc, VCE = 5 Vdc) hFE 20 — 80 — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1 MHz) Cob — 95 125 pF FUNCTIONAL TESTS (Figure 1) Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 80 W, f = 470 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 80 W, f = 470 MHz) Load Mismatch (VCC = 28 Vdc, Pout = 80 W, f = 470 MHz, VSWR = 30:1, All Phase Angles at Frequency of Test) GPE η ψ No Degradation in Output Power 7.3 50 8.8 60 — — dB % et4U.com C12 DataSheet4U.com L3 C11 R1 DUT RF INPUT Z1 L1 C1 BEAD C5 C2 C3 C4 C6 L2 RFC1 C14 R2 C13 + – L4 + C15 VCC 28 V DataShee C10 Z2 Z3 Z4 RF OUTPUT C7 C8 C9 Bead C1, C2, C8, C9 C3, C4, C6, C7 C5, C10 C11, C13 C12, C14 C15 L1 L2 Ferroxcube #56–590–65/3B 0.8 – 20 pF, Johanson (JMC 5501) 25 pF, 100 V, Underwood 100 pF, 100 .


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