C2334

DATA SHEET SILICON POWER TRANSISTOR 2SC2334 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2334 is a mold power transistor developed for high-speed switching, and is ideal for use as a driver in devices such as switching www.DataSheet4U.com regulators, DC/DC converters, and high-frequency power amplifiers. ORDERING INFORMATION Part No. 2SC2334 Package TO-220AB FEATURES Low collector saturation voltage Fast switching speed Complementary transistor: 2SA1010 (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg TC = 25°C TA = 25°C PW ≤ 300 µs, duty cycle ≤ 10% Conditions Ratings 150 100 7.0 7.0 15 3.5 40 1.5 150 −55 to +150 Unit V V V A A A W W °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14902EJ2V1DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan 2002 2SC2334 ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Collector to emitter voltage Symbol VCEO(SUS) VCEX(SUS)1 VCEX(SUS)2 C...