H2N5551

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6219 Issued Date : 1992.09.21 Revised Date : 2004.12.28 Page No. : 1/5 H2N5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N5551 is designed for amplifier transistor. Features Complements to PNP Type H2N5401 High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ......................................................................................................................... 180 V VCEO Collector to Emitter Voltage ...................................................................................................................... 160 V VEBO Emitter to Base Voltage ................................................................................................................................ 6 V IC Collector Current .............................................................................