H2N5089

HI-SINCERITY MICROELECTRONICS CORP. H2N5089 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6273 Issued Date : 1993.12.08 Revised Date : 2005.01.20 Page No. : 1/4 Description Amplifier Transistor. Absolute Maximum Ratings TO-92 Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 350 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ........................................................................................................................... 30 V VCEO Collector to Emitter Voltage ...........