H7N0308CF

H7N0308CF Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 3.8 mΩ typ. Low drive current 4.5 V gate drive device can be driven from 5 V source Outline TO-220CFM ADE-208-1570A(Z) 2nd. Edition Aug. 2002 D G S 123 1. Gate 2. Drain 3. Source H7N0308CF Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation V DSS V GSS ID I Note 1 D(pulse) I DR Pch Note 2 Channel to Case Thermal Impedance θch-c Channel to Ambient Thermal Impedance θch-a Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Ratings 30 ±20 60 240 60 30 4.17 62.5 150 –55 to +150 Unit V V A A A W °C/W °C/W °C °C Rev.1, Aug. 2002, page 2 of 2 H7N0308CF Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 30 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current I — GSS Zero gate voltage drain current I — DSS Gate to source cutoff voltage VGS(off) 1.0 Static drain to source on state RDS(on) — resistance — Forward transfer admittance Input capacitance |yfs| 42 Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Total gate charge Qg — Gate to source charge Qgs — Gate to drain charge Qgd — Turn-on delay time td(on) — Rise time tr — Turn-off del...