H2N4403

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6221 Issued Date : 1992.09.30 Revised Date : 2004.08.13 Page No. : 1/5 H2N4403 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N4403 is designed for general purpose switching and amplifier applications. Features Complementary to H2N4401 High Power Dissipation: 625mW at 25°C High DC Current Gain: 100-300 at 150mA High Breakdown Voltage: 40V Min. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW Maximum Voltages and ...