H2N4126

HI-SINCERITY MICROELECTRONICS CORP. H2N4126 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6216 Issued Date : 1992.09.22 Revised Date : 2005.01.20 Page No. : 1/4 Description The H2N4126 is designed for general purpose switching and amplifier applications. Features Complementary to H2N4124 High Power PT: 625mW at 25°C High DC Current Gain hFE: 120-360 at IC=2mA TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base...