H2N4124

HI-SINCERITY MICROELECTRONICS CORP. H2N4124 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6240 Issued Date : 1992.11.25 Revised Date : 2005.01.20 Page No. : 1/4 Description The H2N4124 is designed for general purpose switching and amplifier applications. Features Complementary to H2N4126 Low Collector to Emitter Saturation Voltage TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 350 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ...............................