DatasheetsPDF.com

IS64WV102416BLL Dataheets PDF



Part Number IS64WV102416BLL
Manufacturers ISSI
Logo ISSI
Description 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
Datasheet IS64WV102416BLL DatasheetIS64WV102416BLL Datasheet (PDF)

www.DataSheet4U.com IS61WV102416ALL IS61WV102416BLL IS64WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES DESCRIPTION ISSI APRIL 2006 ® The ISSI IS61WV102416ALL/BLL and IS64WV102416BLL • High-speed access times: are high-speed, 16M-bit static RAMs organized as 1024K 8, 10, 20 ns words by 16 bits. It is fabricated using ISSI's high-perform• High-performance, low-power CMOS process ance CMOS technology. This highly reliable process coupled • Multiple center .

  IS64WV102416BLL   IS64WV102416BLL



Document
www.DataSheet4U.com IS61WV102416ALL IS61WV102416BLL IS64WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES DESCRIPTION ISSI APRIL 2006 ® The ISSI IS61WV102416ALL/BLL and IS64WV102416BLL • High-speed access times: are high-speed, 16M-bit static RAMs organized as 1024K 8, 10, 20 ns words by 16 bits. It is fabricated using ISSI's high-perform• High-performance, low-power CMOS process ance CMOS technology. This highly reliable process coupled • Multiple center power and ground pins for greater with innovative circuit design techniques, yields high-perfornoise immunity mance and low power consumption devices. • Easy memory expansion with CE and OE options When CE is HIGH (deselected), the device assumes a • CE power-down standby mode at which the power dissipation can be reduced down with CMOS input levels. • Fully static operation: no clock or refresh required Easy memory expansion is provided by using Chip Enable • TTL compatible inputs and outputs and Output Enable inputs, CE and OE. The active LOW • Single power supply Write Enable (WE) controls both writing and reading of the VDD 1.65V to 2.2V (IS61WV102416ALL) memory. A data byte allows Upper Byte (UB) and Lower speed = 20ns for VDD 1.65V to 2.2V Byte (LB) access. VDD 2.4V to 3.6V (IS61/64WV102416BLL) ee The device is packaged in the JEDEC standard 48-pin speed = 10ns for VDD 2.4V to 3.6V DataSh TSOP Type I and 48-pin Mini BGA (9mm x 11mm). speed = 8ns for VDD 3.3V + 5% DataSheet4U.com • Packages available: – 48-ball miniBGA (9mm x 11mm) – 48-pin TSOP (Type I) • Industrial and Automotive Temperature Support • Lead-free available • Data control for upper and lower bytes FUNCTIONAL BLOCK DIAGRAM A0-A19 DECODER 1024K x 16 MEMORY ARRAY VDD GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT COLUMN I/O CE OE WE UB LB CONTROL CIRCUIT Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. DataSheet4U.com Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 02/13/06 1 DataSheet 4 U .com www.DataSheet4U.com IS61WV102416ALL IS61WV102416BLL IS64WV102416BLL 48-pin mini BGA (9mmx11mm) 1 2 3 4 5 6 ISSI ® A B C D E F G H LB I/O8 I/O9 GND VDD I/O14 I/O15 A18 OE UB I/O10 I/O11 I/O12 I/O13 A19 A8 A0 A3 A5 A17 NC A14 A12 A9 A1 A4 A6 A7 A16 A15 A13 A10 A2 CE I/O1 I/O3 I/O4 I/O5 WE A11 NC I/O0 I/O2 VDD GND I/O6 I/O7 NC m et4U.co ee DataSh DataSheet4U.com PIN DESCRIPTIONS A0-A19 I/O0-I/O15 CE OE WE LB UB NC VDD GND Address Inputs Data Inputs/Outputs Chip Enable Input Output Enable Input Write Enable Input Lower-byte Co.


LTC4053-4.2 IS64WV102416BLL IS61WV102416BLL


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)