DatasheetsPDF.com

MTP30P06V

Part Number	MTP30P06V
Manufacturer	Motorola
Description	TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
Published	Aug 10, 2006
Detailed Description	com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP30P06V/D Designer's TMOS V Powe...
Datasheet	MTP30P06V PDF File

Overview

com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP30P06V/D Designer's TMOS V Power Field Effect Transistor P–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs.
This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.
Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circui...

Similar Datasheet

MTP30P06V TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM - Motorola
MTP30P06V Power MOSFET 30 Amps - ON Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)