2SC2305

www.DataSheet4U.com Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2305 DESCRIPTION ¡¤ ¡¤ With TO-3PN package ¡¤ High breakdown voltage ¡¤ Fast switching speed ¡¤ Wide safe operating area APPLICATIONS ¡¤ For switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION DataSheet4U.com DataShee Absolute maximum ratings (Ta=25¡æ ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Collector power dissipation Junction temperature Storage temperature TC=25¡æ CONDITIONS Open emitter Open base Open collector VALUE 400 400 8 7 14 3 80 150 -55~150 ¡æ ¡æ UNIT V V V A A A W DataSheet4U.com JMnic DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ;RBE=¡Þ IC=1m A; IE=0 IE=1m A; IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=400V; IE=0 VEB=5V; IC=0 IC=0.8A ; VCE=5V IC=4A ; VCE=5V 15 8 MIN 400 400 7 SYMBOL VCEO VCBO VEBO VCEsat VBEsat IC...