H11G2

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by H11G1/D H11G1 * GlobalOptoisolator™ [CTR = 1000% Min] 6-Pin DIP Optoisolators Darlington Output (On-Chip Resistors) The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs optically coupled to silicon photodarlington detectors which have integral base–emitter resistors. The on–chip resistors improve higher temperature leakage characteristics. Designed with high isolation, high CTR, high voltage and low leakage, they provide excellent performance. High CTR, H11G1 & H11G2 — 1000% (@ IF = 10 mA), 500% (@ IF = 1 mA) High V(BR)CEO, H11G1 — 100 Volts, H11G2 — 80 Volts To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. Applications Interfacing and coupling systems of different potentials and impedances Phase and Feedback Controls General Purpose Switching Circuits Solid State Relays MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating INPUT LED Reverse Voltage Forward Current — Continuous Forward Current — Peak Pulse Width = 300 µs, 2% Duty Cycle LED Power Dissipation @ TA = 25°C Derate above 25°C OUTPUT DETECTOR Collector–Emitter Voltage H11G1 H11G2 H11G3 VCEO 100 80 55 7 150 150 1.76 Volts VR IF IF PD 6 60 3 120 1.41 Volts mA Amps mW mW/°C 3 2 Symbol Value Unit 1 H11G2* [CTR = 1000% Min] H11G3 [CTR = 200% Min] *Motorola Preferred Devices STYLE 1 PLASTIC 6 1 STANDARD THRU HOLE CAS...