A1281Y

KSA1281 KSA1281 Audio Power Amplifier Collector Power Dissipation : PC=1W 3 Watt Output Application www.DataSheet4U.com 1 TO-92L 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -50 -50 -5 -2 1 150 -55 ~ +150 Units V V V A W °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VBE (sat) VCE (sat) Cob fT Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Test Condition IC= -100, IE=0 IC= -10mA, IB=0 IE= -1mA, IC=0 VCB= -50V, IE=0 VEB= -5V, IC=0 VCE= -2V, IC= -500mA VCE= -2V, IC= -1.5A IC= -1A, IB= -0.05mA IC= -1A, IB= -0.05mA VCB= -10V, IE=0, f=1MHz VCE= -2V, IC= -500mA 40 100 70 40 Min. -50 -50 -5 -100 -100 240 -1.2 -0.5 V V pF MHz Typ. Max. Units V V V nA nA hFE1 Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSA1281 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -1400 IB = -7mA IC[mA], COLLECTOR...