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TIM1414-10LA

Part Number	TIM1414-10LA
Manufacturer	Toshiba
Description	Microwave Power GaAs FET
Features	• Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level • High power - P1dB = 40.5 dBm a...
Published	Jul 30, 2006
Datasheet	TIM1414-10LA PDF File

Features

• Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level
• High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz
• High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz
• Broadband internally matched
• Hermetically sealed pa...

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TIM1414-10LA-252 Microwave Power GaAs FET - Toshiba

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