STZT2222

STZT2222 STZT2222A MEDIUM POWER AMPLIFIER ADVANCE DATA s s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE PNP COMPLEMENTS ARE STZT2907 AND STZT2907A RESPECTIVELY 2 1 SOT-223 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter STZT2222 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T c = 25 C Storage Temperature Max. Operating Junction Temperature o Value STZT2222A 75 40 6 0.8 1.5 -65 to 150 150 60 30 5 Unit V V V A W o o C C 1/5 October 1995 DataSheet 4 U .com STZT2222/STZT2222A THERMAL DATA R thj-amb R thj-tab Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 83.3 10 o o C/W C/W Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEX IBEX I EBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (V BE = -3V) Base Cut-off Current (V BE = -3V) Emitter Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (IE = 0) Test Conditions V CB = rated V CBO V CB = rated V CBO V CE = 60 V V CE = 60 V T amb = 125 C o Min. Typ. Max. 10 10 10 20 Unit nA µA nA nA for STZT2222A for STZT2222...