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NE66719

California Eastern Labs
Part Number NE66719
Manufacturer California Eastern Labs
Description NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
Published Jul 24, 2006
Detailed Description www.DataSheet4U.com NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • HIGH GAIN BANDWIDTH: fT = 21 GHz LOW NOI...
Datasheet PDF File NE66719 PDF File

NE66719
NE66719

Overview
www.
DataSheet4U.
com NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • HIGH GAIN BANDWIDTH: fT = 21 GHz LOW NOISE FIGURE: NF = 1.
1 dB at 2 GHz HIGH MAXIMUM GAIN: 20 dB at f = 2 GHz 2 NE66719 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 19 1.
6±0.
1 0.
8±0.
1 1.
6±0.
1 1.
0 0.
2 NEC's NE66719 is fabricated using NEC's UHS0 25 GHz fT wafer process.
This device is ideal for oscillator or low noise amplifier applications at 2 GHz and above.
0.
5 3 1 0.
75±0.
05 0.
6 0 to 0.
1 0.
15 -0.
05 +0.
1 0.
3 -0 +0.
1 DESCRIPTION 0.
5 +0.
1 -0 UB PIN CONNECTIONS 1.
Emitter 2.
Base DataSheet4U.
com3.
Collector DataShee ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBE...


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